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Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
Roura Grabulosa, Pere; López-de Miguel, Manel; Cornet i Calveras, Albert; Morante i Lleonart, Joan R.
A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV
2010-11-07
Compostos d'alumini
Compostos d'indi
Fotoluminescència
Semiconductors
Aluminum compounds
Indium compounds
Photoluminescence
Tots els drets reservats
Article
American Institute of Physics
         

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