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Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition
Roura Grabulosa, Pere; Costa i Balanzat, Josep; Morante i Lleonart, Joan R.; Bertrán Serra, Enric
The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature
2010-11-07
Fotoluminescència
Semiconductors
Materials nanoestructurals
Silici
Nanostructure materials
Photoluminescence
Silicon
Tots els drets reservats
Article
American Institute of Physics
         

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