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Title:
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Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
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Author:
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Pellegrino, Paolo; Leveque, P.; Hallen, A.; Lalita, J.; Jagadish, C.(Chennupati); Svensson, Bengt G.
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Other authors:
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Universitat de Barcelona |
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Publication date:
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2010-05-04 |
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Subject(s):
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Microelectrònica Dispositius magnètics Microelectronics Magnetic devices |
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Rights:
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(c) The American Physical Society, 2001
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Document type:
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Article |
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