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RECERCAT Home > Universitat de Barcelona > Electrònica > Articles publicats en revistes (Electrònica) > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2445/8760

Title: Gallium-Indium-Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material
Author: Barquinha, Pedro M. C.; Vilà i Arbonès, Anna Maria; Gonçalves, Gonçalo; Pereira, Luís M. N.; Martins, Rodrigo F. P.; Morante i Lleonart, Joan Ramon; Fortunato, Elvira M. C.
Other authors: Universitat de Barcelona
Publication date: 2010-05-04
Subject(s): Espectrometria de masses
Semiconductors amorfs
Annealing
Secondary ion mass spectroscopy
Thin film transistors
Time of flight
Mass spectrometers
Rights: (c) IEEE, 2008
Document type: Article
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Gas sensing properties of catalytically modified WO3 with copper and vanadium for NH3 detection (Publication date: 2010-05-04)
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