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Electronic structure and properties of AlN
Ruiz Sabín, Eliseo; Álvarez, Santiago (Álvarez Reverter); Alemany i Cahner, Pere
Universitat de Barcelona
The electronic structure of the wurtzite-type phase of aluminum nitride has been investigated by means of periodic ab initio Hartree-Fock calculations. The binding energy, lattice parameters (a,c), and the internal coordinate (u) have been calculated. All structural parameters are in excellent agreement with the experimental data. The electronic structure and bonding in AlN are analyzed by means of density-of-states projections and electron-density maps. The calculated values of the bulk modulus, its pressure derivative, the optical-phonon frequencies at the center of the Brillouin zone, and the full set of elastic constants are in good agreement with the experimental data.
2010-05-04
Propietats mecàniques
Semiconductors
Estructura electrònica
Mechanical properties
Semiconductors
Electronic structure
(c) The American Physical Society, 1994
Article
The American Physical Society
         

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