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Title:	High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
Author:	Gacevic, Z.; Fernández-Garrido, S.; Rebled Corsellas, José Manuel; Estradé Albiol, Sònia; Peiró Martínez, Francisca; Calleja Pardo, Enrique
Other authors:	Universitat de Barcelona
Abstract:	We report on properties of high quality 60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be 61.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.
Publication date:	2012-11-20
Subject(s):	Optoelectrònica Semiconductors Estructura cristal·lina (Sòlids) Indi (Metall) Optoelectronics Semiconductors Layer structure (Solids) Indium
Rights:	(c) American Institute of Physics , 2011
Document type:	Article Article - Published version
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