To access the full text documents, please follow this link: http://hdl.handle.net/2445/32769

High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
Gacevic, Z.; Fernández-Garrido, S.; Rebled Corsellas, José Manuel; Estradé Albiol, Sònia; Peiró Martínez, Francisca; Calleja Pardo, Enrique
Universitat de Barcelona
Optoelectrònica
Semiconductors
Estructura cristal·lina (Sòlids)
Indi (Metall)
Optoelectronics
Semiconductors
Layer structure (Solids)
Indium
(c) American Institute of Physics , 2011
Article
Article - Published version
American Institute of Physics
         

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