|
Title:
|
Spectroscopic ellipsometry study of the In1-x Gax Asy P1-y / InP Heterojunctions grown by metalorganic chemical-vapor deposition
|
|
Author:
|
Drévillon, B.; Bertran Serra, Enric; Alnot, P.; Olivier, J.; Razeghi, M.
|
|
Other authors:
|
Universitat de Barcelona |
|
Abstract:
|
The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1 xGaxAsy/InP and InP/In1 xGaxAsyP1 y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized. |
|
Publication date:
|
2012-10-09 |
|
Subject(s):
|
Pel·lícules fines
El·lipsometria
Thin films
Ellipsometry |
|
Rights:
|
(c) American Institute of Physics , 1986
|
|
Document type:
|
Article
Article - Published version |
|
Share:
|
|
