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The valence band alignment at ultrathin SiO2/Si interfaces
Alay, Josep Lluís; Hirose, M.
Universitat de Barcelona
High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6
4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface.
2012-10-08
Semiconductors
Interfícies (Ciències físiques)
Semiconductors
Interfaces (Physical sciences)
(c) American Institute of Physics , 1997
Article
Article - Published version
American Institute of Physics
         

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