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Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting.
Berencén Ramírez, Yonder Antonio; Carreras, Josep; Jambois, Olivier; Ramírez Ramírez, Joan Manel; Rodríguez, J. A.; Domínguez, Carlos (Domínguez Horna); Hunt, Charles E.; Garrido Fernández, Blas
Universitat de Barcelona
The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi- and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to lowcost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options. ©2011 Optical Society of America OCIS codes: (230.2090) Electro-optical devices; (150.2950) Illumination.
Física de l'estat sòlid
Dispositius electroòptics
Solid state physics
Electrooptical devices
(c) Optical Society of America, 2011
Article - Published version
Optical Society of America

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