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Silicon nanocluster sensitization of erbium ions under low-energy optical excitation
Prtljaga, Nikola; Navarro Urrios, Daniel; Pitanti, Alessandro; Ferrarese Lupi, Federico; Garrido Fernández, Blas; Pavesi, Lorenzo
Universitat de Barcelona
The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has been studied under low-energy (long wavelength) optical excitation. Profound differences in fast visible and infrared emission dynamics have been found with respect to the high-energy (shortwavelength) case. These findings point out to a strong dependence of the energy transfer process on the optical excitation energy. Total inhibition of energy transfer to erbium states higher than thefirst excited state (4I13/2) has been demonstrated for excitation energy below 1.82 eV (excitation wavelength longer than 680 nm). Direct excitation of erbium ions to the first excited state (4I13/2)has been confirmed to be the dominant energy transfer mechanism over the whole spectral range of optical excitation used (540 nm¿680 nm).
2012-07-05
Fotònica
Silici
Nanocristalls
Photonics
Silicon
Nanocrystals
(c) American Institute of Physics, 2012
Article
Article - Published version
American Institute of Physics
         

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