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Abstract:
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In this report we present the growth process of the cobalt oxide system using
reactive electron beam deposition. In that technique, a target of metallic cobalt
is evaporated and its atoms are in-flight oxidized in an oxygen rich reactive atmosphere
before reaching the surface of the substrate. With a trial and error
procedure the deposition parameters have been optimized to obtain the correct
stoichiometry and crystalline phase. The evaporation conditions to achieve the
correct cobalt oxide salt rock structure, when evaporating over amorphous silicon
nitride, are: 525 K of substrate temperature, 2.5·10-4 mbar of oxygen partial
pressure and 1 Å/s of evaporation rate. Once the parameters were optimized a
set of ultra thin film ranging from samples of 1 nm of nominal thickness to 20nm
thick and bulk samples were grown. With the aim to characterize the samples and
study their microstructure and morphology, X-ray diffraction, transmission electron
microscopy, electron diffraction, energy dispersive X-ray spectroscopy and
quasi-adiabatic nanocalorimetry techniques are utilised. The final results show
a size dependent effect of the antiferromagnetic transition. Its Néel temperature
becomes depressed as the size of the grains forming the layer decreases. |