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RECERCAT Home > Universitat Politècnica de Catalunya > Documents de recerca > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2117/11964

Title: Robustness of SRAM to Power Supply Noise during Leakage Power Saving in DVS
Author: Vatajelu, Elena Ioana; Renovell, Michel; Figueras Pàmies, Joan
Other authors: Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
Publication date: 2012-05-11
Subject(s): Àrees temàtiques de la UPC::Enginyeria electrònica i telecomunicacions
Electronic engineering
Enginyeria electrònica -- Congressos
Rights: Restricted access - publisher's policy
Document type: Conference Object
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SRAM stability metric under transient noise (Publication date: 2013-02-22)
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Transient noise failures in SRAM cells: dynamic noise margin metric (Publication date: 2012-05-10)
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Statistical analysis of SRAM aarametric failure under supply voltage scaling (Publication date: 2012-05-11)
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Parametric Failure Analysis of Embedded SRAMs using Fast & Accurate Dynamic Analysis (Publication date: 2012-05-11)
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Process variability in sub-16nm bulk CMOS technology (Publication date: 2012-05-10)
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