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Effect of amorphous silicon carbide layer thickness on passivation quantity of crystalline silicon surface
Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
2012-05-10
Àrees temàtiques de la UPC::Enginyeria electrònica i telecomunicacions::Microelectrònica
Silicon.
Microelectronics.
Amorphous film
Amorphous semiconductors
Crystalline surface
Elemental semiconductors
Fixed charge density
Forming gas annealing
Fundamental hole recombination
Passivation
Hydrogenated film
Interface dangling bond
Layer thickness
p-type Crystalline wafer
Saturation
Semiconductor thin films
Silicon compounds
Surface passivation
Wide band gap semiconductors
Microelectrònica
Silici
Restricted access - publisher's policy
Article
American Institute of Physics
         

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