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Improving selective thermal emission properties of three-dimensional macroporous silicon through porosity tuning
Garin Escriva, Moises; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón; Marquier, F.; Arnold, C.; Greffet, J.-J.
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
We present a theoretical and experimental study on the effect of progressive porosity increase,through multiple oxidation/oxide removal steps, upon the optical characteristics in threedimensionalmacroporous silicon. It is shown that, by increasing porosity, optical features can bepushed toward higher frequencies. Optimum porosities exist where normal or omnidirectional totalreflection bandwidths are maximized, doubling the initial values. Results are confirmed experimentallythrough angle-resolved reflectance and thermal emission measurements.
Peer Reviewed
2012-05-10
Àrees temàtiques de la UPC::Enginyeria electrònica i telecomunicacions::Telecomunicació òptica::Fotònica
Oxidation
Photonic crystals
Porosity
Silicon
elemental semiconductors
oxidation
Progressive porosity increase
photonic band gap
porosity
porous semiconductors
reflectivity
silicon
selective thermal emission properties
three-dimensional macroporous silicon
porosity tuning
progressive porosity
omnidirectional total reflection bandwidths
angle-resolved reflectance
thermal emission measurements
Si
Oxidació
Fotònica
Porositat
Silici
Restricted access - publisher's policy
Article
American Institute of Physics
         

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