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Self-interference of charge carriers in ferromagnetic SrRuO3
Herranz Casabona, Gervasi; Sánchez Barrera, Florencio; Martínez Perea, Benjamin; Fontcuberta i Griñó, Josep; García-Cuenca Varona, María Victoria; Ferrater Martorell, Cèsar; Varela Fernández, Manuel, 1956-
Universitat de Barcelona
We report a systematic study of the low-temperature electrical conductivity in a series of SrRuO3 epitaxial thin films. At relatively high temperature the films display the conventional metallic behavior. However, a well-defined resistivity minimum appears at low temperature. This temperature dependence can be well described in a weak localization scenario: the resistivity minimum arising from the competition of electronic self-interference effects and the normal metallic character. By appropriate selection of the film growth conditions, we have been able to modify the mean-free path of itinerant carriers and thus to tune the relative strength of the quantum effects. We show that data can be quantitatively described by available theoretical models.
2012-05-03
Ferromagnetisme
Conductivitat elèctrica
Pel·lícules fines
Ferromagnetism
Electric conductivity
Thin films
(c) American Institute of Physics, 2004
Article
American Institute of Physics
         

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