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Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
Furtmayr, Florian; Vielemeyer, Martin; Stutzmann, Martin; Arbiol i Cobos, Jordi; Estradé Albiol, Sònia; Peiró Martínez, Francisca; Morante i Lleonart, Joan Ramon; Eickhoff, Martin
Universitat de Barcelona
2012-05-03
Cristal·lografia
Ciència dels materials
Crystallography
Materials scienc
(c) American Institute of Physics, 2008
Article
American Institute of Physics
         

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