To access the full text documents, please follow this link: http://hdl.handle.net/2445/24782

Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
Roura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I.
Universitat de Barcelona
2012-05-03
Propietats òptiques
Semiconductors
Optical properties
Semiconductors
(c) American Institute of Physics, 1997
Article
American Institute of Physics
         

Show full item record

Related documents

Other documents of the same author

Roura Grabulosa, Pere; Vilà Arbonés, Anna; Bosch, J.; López-de Miguel, Manel; Cornet i Calveras, Albert; Morante i Lleonart, Joan R.; Westwood, D. I.
Roura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
Westwood, David I.; Woolf, D. A.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
Roura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
Jimenez, Ismael; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
 

Coordination

 

Supporters