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RECERCAT Home > Universitat de Barcelona > Electrònica > Articles publicats en revistes (Electrònica) > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2445/24742

Title: Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP
Author: Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
Other authors: Universitat de Barcelona
Publication date: 2012-05-02
Subject(s): Microscòpia electrònica
Semiconductors
Electron microscopy
Semiconductors
Rights: (c) American Institute of Physics, 1995
Document type: Article
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Alloy inhomogeneities in InAlAs strained layers grown by MBE (Publication date: 2012-10-08)
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Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers (Publication date: 2012-05-03)
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Effects of Nb doping on the TiO2 anatase-to-rutile phase transition (Publication date: 2012-05-03)
Arbiol i Cobos, Jordi; Cerdà Belmonte, Judith; Dezanneau, Guilhem; Cirera Hernández, Albert; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers (Publication date: 2012-05-02)
Roura Grabulosa, Pere; Clark, S. A.; Bosch Estrada, José; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures (Publication date: 2010-06-26)
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