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Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP
Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
Universitat de Barcelona
2012-05-02
Microscòpia electrònica
Semiconductors
Electron microscopy
Semiconductors
(c) American Institute of Physics, 1995
Article
American Institute of Physics
         

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