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40% tunneling magnetoresistance after anneal at 380°C for tunnel junctions with iron¿oxide interface layers
Zhang, Zongzhi; Cardoso, Susana; Freitas, P. P.; Batlle Gelabert, Xavier; Wei, Peng; Barradas, N.; Soares, J. C.
Universitat de Barcelona
2012-03-02
Propietats magnètiques
Circuits de transistors
Electrònica de l'estat sòlid
Transistor circuits
Solid state electronics
Magnetic properties
(c) American Institute of Physics, 2001
Article
American Institute of Physics
         

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